50N06 N-Channel Metal Oxide Semiconductor Field Effect Transistor

CSP50N06,Field Effect Transistor
1,VDSS:60V
2,RDS(ON) ):18 mili-ohm
3,Id:50 A; Package:TO-220
4,Certification:RoHS Compliant

5,FEATURES :
* RDS(ON) = 23m@VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability

 

6,SYMBOL :

CSU50N06 TO-251 Package
CSP50N06 TO-220 Package
CSD50N06 TO-252 Package

 

7,APPLICATION :
Networking DC-DC Power System
Auotmobile Convert System
Power Supply,Auto Device etc..

 

8,DESCRIPTION:
The CSI 50N06 is three-terminal silicon device with current
conduction capability of about 50A, fast switching speed. Low
on-state resistance, breakdown voltage rating of 60V, and max
threshold voltages of 4 volt.
It is mainly suitable electronic ballast, and low power switching
mode power appliances.

 

CSP50N06, N-Channel Metal Oxide Semiconductor Field Effect Transistor:

Product Name	MOSFET;Mental Oxiode Semiconductor Field Effector Transistor
Series	N-Channel Power MOSFET-600 Volts Series
Package Type	TO-220
Certificate	ISO9001:2008 Certificate;SGS Report;RoHS Compliant.
Delivery Time	Within 2-4 Weeks After Order Confirmed.
Cooperation Customers	NFA,BYD,Hyundai and Panda etc..
Performance	Specification Parameters As Follows:
Part  Number	PD	ID	V(BR)DSS	RDS(ON)	VGS	EAS	PIN-ARRAY	Package
	W	A	V	Ω	V	J
CSP5N60	100	4.5	600	2.2	±30	216	GDS	TO-220
CSP6N60	115	5.6	600	1.35	±30	385	GDS	TO-220
CSP8N60	140	8	600	1	±30	560	GDS	TO-220
CSP10N60	158	9.9	600	0.75	±30	760	GDS	TO-220
CSP12N60	180	11.5	600	0.73	±30	830	GDS	TO-220
CSP50N06	130	50	60	0.023	±25	727	GDS	TO-220
CSP75N80M	268	80	75	0.009	±25	700	GDS	TO-220
NOTE